In Ta PVD, the Ta/TaN sputtering target experiences non-uniform erosion, leading to the formation of a deep racetrack groove that necessitates premature replacement despite significant remaining material. This localized erosion, driven by the magnetron's magnetic-field configuration, concentrates plasma and sputtering efficiency in a narrow area, ultimately reducing target life and increasing consumable costs. Attempts to mitigate the issue by adjusting the deposition rate have yielded minimal improvements, further complicating the situation as the economic implications and potential impacts on yield and chamber health remain uncertain.
The formation of a deep racetrack groove leads to premature replacement of the Ta/TaN sputtering target, resulting in increased operational costs and waste of material that could still be utilized.
Localized erosion reduces the overall lifespan of the target, which can disrupt production schedules and lead to increased downtime for maintenance and replacement, negatively impacting overall productivity.
The uncertainty surrounding the economic implications and potential impacts on yield and chamber health complicates decision-making processes, making it difficult to justify investments in mitigation strategies or to optimize production efficiency.
Achieve uniform erosion across the Ta/TaN sputtering target to maximize material utilization and extend target lifespan.
Current magnetron magnetic-field configuration leads to localized erosion, preventing uniform utilization of the target material.
Insufficient understanding of the economic implications and potential impacts on yield and chamber health hinders decision-making for mitigation strategies.
Limited effectiveness of current mitigation attempts, such as adjusting deposition rates, restricts options for improving target lifespan and utilization.
The non-uniform erosion of the Ta/TaN sputtering target in Ta PVD leads to premature replacement and underutilization of expensive material, increasing operational costs and complicating production efficiency.
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)
Wet cleaning is widely used in microchip manufacturing. Single wafer equipment is working as follows. A wafer rotates, and chemistry is poured from a movable nozzle. Water rinsing is performed at the end of the process. Loading of a new batch of the chemistry resulted in excursion - a strongly increased amount of defects was observed on the wafer after the processing. The project is dedicated to the failure analysis and creation of innovative solutions.
This project investigates radial non-uniformity of CDO low-k dielectric deposited by PECVD and its possible impact on wafer performance. Final test data indicate that faster dies are mainly located closer to the wafer center, while slower dies are more often found near the wafer periphery. The corresponding RC-delay trend also increases toward the wafer edge. The focus of the project is the capacitance component of RC-delay. CDO is expected to provide a low dielectric constant between BEOL metal lines, but the deposited film may not have uniform properties across the wafer. Near the wafer edge, the process can be influenced by different gas flow, plasma behavior, residence time, temperature, and pumping conditions. This may lead to stronger oxidation and deeper precursor decomposition near the periphery, forming CDO that is more oxygen-rich, less carbon-rich, denser, and closer in behavior to SiO₂. As a result, the dielectric constant k may increase toward the wafer edge, causing higher interline capacitance, higher RC-delay, and lower die speed. The project uses Functional Modeling to understand how PECVD chamber components and process conditions affect CDO film properties. The goal is to identify the main functional and problematic interactions and propose directions for compensation, such as radial gas-flow tuning, multi-zone showerhead design, edge compensation flow, and local plasma or temperature control.