In Ta PVD, the Ta/TaN sputtering target experiences non-uniform erosion, leading to the formation of a deep racetrack groove that necessitates premature replacement despite significant remaining material. This localized erosion, driven by the magnetron's magnetic-field configuration, concentrates plasma and sputtering efficiency in a narrow area, ultimately reducing target life and increasing consumable costs. Attempts to mitigate the issue by adjusting the deposition rate have yielded minimal improvements, further complicating the situation as the economic implications and potential impacts on yield and chamber health remain uncertain.
The formation of a deep racetrack groove leads to premature replacement of the Ta/TaN sputtering target, resulting in increased operational costs and waste of material that could still be utilized.
Localized erosion reduces the overall lifespan of the target, which can disrupt production schedules and lead to increased downtime for maintenance and replacement, negatively impacting overall productivity.
The uncertainty surrounding the economic implications and potential impacts on yield and chamber health complicates decision-making processes, making it difficult to justify investments in mitigation strategies or to optimize production efficiency.
Achieve uniform erosion across the Ta/TaN sputtering target to maximize material utilization and extend target lifespan.
Current magnetron magnetic-field configuration leads to localized erosion, preventing uniform utilization of the target material.
Insufficient understanding of the economic implications and potential impacts on yield and chamber health hinders decision-making for mitigation strategies.
Limited effectiveness of current mitigation attempts, such as adjusting deposition rates, restricts options for improving target lifespan and utilization.
The non-uniform erosion of the Ta/TaN sputtering target in Ta PVD leads to premature replacement and underutilization of expensive material, increasing operational costs and complicating production efficiency.
Wet cleaning is widely used in microchip manufacturing. Single wafer equipment is working as follows. A wafer rotates, and chemistry is poured from a movable nozzle. Water rinsing is performed at the end of the process. Loading of a new batch of the chemistry resulted in excursion - a strongly increased amount of defects was observed on the wafer after the processing. The project is dedicated to the failure analysis and creation of innovative solutions.
Flash heating of a wafer is widely used in microchip manufacturing. The purpose of the process is to prevent the diffusion of ions and atoms. During the flash process, a wafer breakage occurs. The project's purpose is to learn and understand the mechanism of the wafer breakage and propose the solutions to prevent the wafer breakage
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)