Why a water fine filter can result in problems
The system:
Water that is used for washing high-purity products.
Failure:
Too many particles percent in the water
Possible solution:
Add a filter. The manager requested to add 10 nm filter to be in the sequence to the 100nm filter. It is expected that the proposed change will improve a particle performance
Real problem:
To define what is the real risk, create a model of the failure and generate a mitigation/failure prevention
Operational Effectiveness – OE
Effective
Ineffective
OE 1.1
Operational Perfectness - OP
Basic functions
Components
Supersystems
OP 0.33
Water | 10 |
Filter 100nm | 6 6 |
H2O agglomerates | 6 24 |
H2O Molecules | 6 21 |
Particles | 4 |
Filter 10nm | 2 24 |
Fittings and all the parts of the system | 2 8 |
Pump | 2 |
Molecules of water create agglomerates having a size of tens mn. The number of free H2O molecules defines the water activity. The fine filter destroys the agglomerates and increases the number of free molecules H2O that increases the water activity - high interaction rate, high evaporation rate, etc. The elevated activity of the water may result in the dissolution and precipitation of new defects and particles. To ensure successful performance 40 Inventive principles should be enrolled to find a solution to the problem
If | If I use a very fine filter |
|---|---|
Then | The purity of the water will be improved - the water will be pure from particles |
But | The agglomerates of the water will be destroyed and the activity on the water will be increased |
Similar projects
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)
Wet cleaning is widely used in microchip manufacturing. Single wafer equipment is working as follows. A wafer rotates, and chemistry is poured from a movable nozzle. Water rinsing is performed at the end of the process. Loading of a new batch of the chemistry resulted in excursion - a strongly increased amount of defects was observed on the wafer after the processing. The project is dedicated to the failure analysis and creation of innovative solutions.
This project investigates radial non-uniformity of CDO low-k dielectric deposited by PECVD and its possible impact on wafer performance. Final test data indicate that faster dies are mainly located closer to the wafer center, while slower dies are more often found near the wafer periphery. The corresponding RC-delay trend also increases toward the wafer edge. The focus of the project is the capacitance component of RC-delay. CDO is expected to provide a low dielectric constant between BEOL metal lines, but the deposited film may not have uniform properties across the wafer. Near the wafer edge, the process can be influenced by different gas flow, plasma behavior, residence time, temperature, and pumping conditions. This may lead to stronger oxidation and deeper precursor decomposition near the periphery, forming CDO that is more oxygen-rich, less carbon-rich, denser, and closer in behavior to SiO₂. As a result, the dielectric constant k may increase toward the wafer edge, causing higher interline capacitance, higher RC-delay, and lower die speed. The project uses Functional Modeling to understand how PECVD chamber components and process conditions affect CDO film properties. The goal is to identify the main functional and problematic interactions and propose directions for compensation, such as radial gas-flow tuning, multi-zone showerhead design, edge compensation flow, and local plasma or temperature control.