Process description
The wet cleaning process is performed with single-wafer equipment, one by one.
The wafer rotates, and the chemistry or rinsing water is poured from the nozzle to the central area of the wafer, but can also move from the center to the periphery of the wafer.
Equipment:
Failure and possible trigger:
The new batch of chemistry is contaminated. The chemical content of the suspected batch does not match the typical composition of the chemistry.
The disadvantages of the traditional approach
A systematic approach is needed. The usage of creative thinking tools is necessary for the generation of innovative ideas
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)
Flash heating of a wafer is widely used in microchip manufacturing. The purpose of the process is to prevent the diffusion of ions and atoms. During the flash process, a wafer breakage occurs. The project's purpose is to learn and understand the mechanism of the wafer breakage and propose the solutions to prevent the wafer breakage
Copper electroplating is essential for forming advanced semiconductor interconnects, yet radial thickness non-uniformity remains a costly challenge. Thicker deposition at the wafer edge and thinner copper at the center force manufacturers to rely on overplating and CMP compensation, increasing material waste and process cost. Using the PRIZ Platform, this project reveals that the true amplification mechanism lies in operating within a kinetically controlled regime, where small voltage variations caused by seed-layer resistance produce large thickness deviations. By shifting the process closer to diffusion-controlled behavior and reducing sensitivity to voltage fluctuations, uniform deposition can be achieved intrinsically — enabling thinner seed layers, reduced overplating, lower CMP burden, and overall cost reduction.