Process description
The wet cleaning process is performed with single wafer equipment: one by one.
The wafer rotates, and the chemistry or rinsing water is poured from the nozzle to the central area of the wafer but can also move from the center to the periphery of the wafer.
Equipment:
Failure and possible trigger:
The new batch of chemistry is contaminated. The chemical content of the suspected batch does not match the typical composition of the chemistry.
The disadvantages of the traditional approach
A systematic approach is needed. The usage of creative thinking tools is necessary for the generation of innovative ideas
Flash heating of a wafer is widely used in microchip manufacturing. The purpose of the process is to prevent the diffusion of ions and atoms. During the flash process, a wafer breakage occurs. The project's purpose is to learn and understand the mechanism of the wafer breakage and propose the solutions to prevent the wafer breakage
The number of particles is a critical parameter for microchip manufacturing. Each, even a very small particle, can potentially destroy a die. Therefore filters are widely used. Water is always filtered through fine filters to reduce the number of particles. Nevertheless, if the filter is too fine, it could cause a problem. This issue was investigated with the help of Functional Modeling. Possible solutions were generated using 40 Inventive Principles.
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)