Temperature compensation is an interesting idea, but not the most practical solution for improving Ta target utilization.
Move or scan the magnetron field
If the racetrack is caused by magnetic field localization, then move the magnetic field during the target lifetime. The erosion zone will move, and Ta will be consumed more uniformly.
Change magnet configuration
Design the magnetron so that the plasma density is distributed over a wider area, not concentrated in one narrow ring.
Use a variable magnetic-field profile during target life
At the beginning, use one racetrack position; later, shift it slightly inward or outward. This can spread erosion over more target area.
Pre-shape the Ta target
This is closer to your compensation idea. Instead of heating, make the target initially thicker where erosion will be strongest. Then the target profile becomes more uniform during usage.
Use multi-zone magnetron control
If possible, control several magnetic zones to redistribute plasma density and ion bombardment.
Improve redeposition management
Since Ta atoms are sputtered in many directions, shields and chamber walls receive Ta redeposition. Their shape and replacement schedule should be part of the same model.
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)
Wet cleaning is widely used in microchip manufacturing. Single wafer equipment is working as follows. A wafer rotates, and chemistry is poured from a movable nozzle. Water rinsing is performed at the end of the process. Loading of a new batch of the chemistry resulted in excursion - a strongly increased amount of defects was observed on the wafer after the processing. The project is dedicated to the failure analysis and creation of innovative solutions.
This project investigates radial non-uniformity of CDO low-k dielectric deposited by PECVD and its possible impact on wafer performance. Final test data indicate that faster dies are mainly located closer to the wafer center, while slower dies are more often found near the wafer periphery. The corresponding RC-delay trend also increases toward the wafer edge. The focus of the project is the capacitance component of RC-delay. CDO is expected to provide a low dielectric constant between BEOL metal lines, but the deposited film may not have uniform properties across the wafer. Near the wafer edge, the process can be influenced by different gas flow, plasma behavior, residence time, temperature, and pumping conditions. This may lead to stronger oxidation and deeper precursor decomposition near the periphery, forming CDO that is more oxygen-rich, less carbon-rich, denser, and closer in behavior to SiO₂. As a result, the dielectric constant k may increase toward the wafer edge, causing higher interline capacitance, higher RC-delay, and lower die speed. The project uses Functional Modeling to understand how PECVD chamber components and process conditions affect CDO film properties. The goal is to identify the main functional and problematic interactions and propose directions for compensation, such as radial gas-flow tuning, multi-zone showerhead design, edge compensation flow, and local plasma or temperature control.