Disconnect the thermocouples control during the LOADING if the furnace is turned on.
Turn off the heaters of the furnace when the boat is removed. The furnace is big enough to keep the temperature for a long time. Besides, the STABILIZATION step is long enough to compensate for the temperature difference.
Use a mixture of N2 and Ar during LOADING to ensure that all residual air is moved out, even from the bottom zone of the furnace.
During the PRE-LOADING - loading wafers into the boat, the furnace remains open, resulting in losing N2 gas and electricity. It would be better to cover the bottom of the furnace.
Turn off the heaters of the furnace and N2 flow during PRE-LOADING - loading the wafers in the boat
Start N2 flow just before the LOADING, before the loading of the boat with wafers into the furnace. Turn on the heaters only when the boat is completely loaded into the furnace
The quality of the low-zone wafers is different from the mid-zone and top-zone wafers. For instance, the stoichiometry of SiO2 might change. Even small variations of stoichiometry can result in the same change in optical constants that may affect the model of ellipsometric model and result in SiO2 thickness.
During the loading, the lowest thermocouple received the wrong information; therefore, the bottom part of the furnace became overheated.
This project applies Functional Modeling to analyze the single-wafer wet etch process in semiconductor manufacturing. The model shows that wet etch defects are not caused only by chemistry, but also by interactions between the wafer, liquid flow, air, rotation, rinsing, drying, drain, and chamber environment. Key challenges include incomplete wetting, trapped air or bubbles, residue and particle redeposition, evaporation-driven watermarks, and contamination during rinse or drying. The project identifies improvement directions such as better wafer pre-wetting, controlled airflow, reduced evaporation, optimized rinse and drying conditions, and alternative chamber concepts such as face-down processing in a shallow liquid bath.
Wet cleaning is widely used in microchip manufacturing. Single wafer equipment is working as follows. A wafer rotates, and chemistry is poured from a movable nozzle. Water rinsing is performed at the end of the process. Loading of a new batch of the chemistry resulted in excursion - a strongly increased amount of defects was observed on the wafer after the processing. The project is dedicated to the failure analysis and creation of innovative solutions.
This project investigates particle-defect formation during SiO₂ dry etch. Functional modeling revealed that defects can be generated by two coupled mechanisms: chemical formation of SiO₂/SiOFₓ particles from SiF₄ interaction with moisture, and mechanical generation of particles by excessive ion bombardment and sputtering. The proposed improvement direction is to balance chemical etching and ion-assisted etching by properly adjusting the source and bias generators, reducing moisture, improving by-product evacuation, minimizing sputtering, and using pulsed or multi-step process recipes. The goal is to reduce particles and micromasking while maintaining etch rate, profile control, and process stability.