Optimizing IC Interconnection: A Functional Approach to Innovation (Stay updated on the project's progress)
Use silicide passivation instead of a thick Ta barrier layer.
To ensure a small gap between the metal line and ILD. It could be made in different ways, such as using soluble Barriers, we can use a difference in temperature expansion coefficients, etc.
Use ILD with non-uniform density. Actually, we need high density of the material to prevent diffusion of Cu in to ILD
Air daps also prevent the formation of voids within the metal via a metal line - we already have voids. Very strong Cu-electromigration might slightly affect the surface of the via and metal line, but the voids will not be formed within the metal.
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