Optimizing IC Interconnection: A Functional Approach to Innovation (Stay updated on the project's progress)
Use silicide passivation instead of a thick Ta barrier layer.
To ensure a small gap between the metal line and ILD. It could be made in different ways, such as using soluble Barriers, we can use a difference in temperature expansion coefficients, etc.
Use ILD with non-uniform density. Actually, we need high density of the material to prevent diffusion of Cu in to ILD
Air daps also prevent the formation of voids within the metal via a metal line - we already have voids. Very strong Cu-electromigration might slightly affect the surface of the via and metal line, but the voids will not be formed within the metal.
In Step 3 - Sacrificial Light Absorbing Layer deposition - use hot air for the material solidification on the wafer during the Spinon process. This will allow the termination of the furnace and additional movements of the wafer. The high pressure above the rotating wafer will prevent the material from contamination.
Regarding the Step 4 - Photo Lithography (PL) operation simplification:
Why do we develop within the costly PL equipment? Developing the exposed resist is just a wet etch/clean process that can be performed with regular cheap wet cleaning equipment.
Another idea regarding Step 4 - Via Patterning simplification:
Why do we need to develop exposed PR at all? Exposed PR is removed by an aqueous solution, meaning it can be removed by plasma. So, the idea is to apply plasma etch directly after exposure.
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