Optimizing IC Interconnection: A Functional Approach to Innovation (Stay updated on the project's progress)
Current situation
Material waste, particularly involving silicon and other raw materials, poses a significant challenge in semiconductor fabrication, leading to inflated production costs and higher final product prices. The existing manufacturing methods, while sophisticated, are often simplistic and result in prolonged processing times. This project aims to enhance understanding of the interconnection components and their functionalities through a two-step analysis, which will help identify value-adding operations and reveal opportunities for innovation and cost reduction.
Disadvantages
Material waste increases production costs, which can lead to higher prices for consumers and reduced competitiveness in the market.
Prolonged processing times can result in inefficiencies, slowing down the overall production cycle and limiting the ability to meet demand in a timely manner.
The simplistic nature of existing manufacturing methods may overlook critical advancements in technology, hindering innovation and the potential for more effective, cost-saving processes.
Ideal final result
Implement advanced manufacturing techniques that leverage technology to innovate IC interconnection processes, resulting in a 20% decrease in production costs.
Gaps
Lack of advanced manufacturing techniques that integrate modern technology into the IC interconnection process.
Insufficient understanding of the functionality and value of each interconnection component, leading to potential inefficiencies.
Problem statement
Inefficient manufacturing methods in IC interconnection result in excessive material waste and higher production costs, hindering innovation and timely market response.
Similar projects
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)
Wet cleaning is widely used in microchip manufacturing. Single wafer equipment is working as follows. A wafer rotates, and chemistry is poured from a movable nozzle. Water rinsing is performed at the end of the process. Loading of a new batch of the chemistry resulted in excursion - a strongly increased amount of defects was observed on the wafer after the processing. The project is dedicated to the failure analysis and creation of innovative solutions.
Flash heating of a wafer is widely used in microchip manufacturing. The purpose of the process is to prevent the diffusion of ions and atoms. During the flash process, a wafer breakage occurs. The project's purpose is to learn and understand the mechanism of the wafer breakage and propose the solutions to prevent the wafer breakage