Mr. Beliakou

To simplify the polish (CMP) operation, it is proposed that the bulk of the Cu be removed at the electroplater just after the completion of the electrodeposition. It is a straightforward process to replace the polarity to make the wafer an anode and give (-) to the anode. It will dissolve the main affected part of the Cu and simplify the following operation - polish.

"Composite materials" is a good principle; maybe we can dip the wafer into another liquid with very low surface tension that is soluble in the electrolyte, such as ethanol or IPA.

"Partial or excessive action" - to make a prewet of the wafer before the inserting into the electrolyte

Another direction for development and real innovation is to remove the residue at the previous operation - dry etch. In this case the Wet etch operation will not be necessary and can be eliminated.

Instead of pouring the solution on the rotating wafer, we can do the opposite and place it face down in the solution bath.

To make Dry etch process in pulses to ensure the pump to pump out and to remove SiF4 and all other gaseous by-products

Etch stop is needed only on the surface of Cu to prevent Cu diffusion from the bottom Cu metal line to the top ILD. Instead of depositing the Etch Stop material with CVD; it is proposed to elaborate a process of selective deposition of PMMA with dissolved SiC or SiN. The liquid can be spined on the wafer and removed from the ILD (SiO2) areas.

To ensure a small gap between the metal line and ILD. It could be made in different ways, such as using soluble Barriers, we can use a difference in temperature expansion coefficients, etc.

Use ILD with non-uniform density. Actually, we need high density of the material to prevent diffusion of Cu in to ILD

Use silicide passivation instead of a thick Ta barrier layer.

The cleaning solution dissolves the residue, but the contaminated solution remains on the wafer and should be removed by the wafer rotation. The rotation of the wafer results in the removal of the cleaning solution. I would propose to apply "Other way around" principle. Instead of pour out the solution on the rotating wafer, we could rotate the wafer (face down) in the bath of the solution. It gives a better possibility of managing the temperature and renovating the cleaning solution on the wafer surface.

Another idea regarding Step 4 - Via Patterning simplification:Why do we need to develop exposed PR at all? Exposed PR is removed by an aqueous solution, meaning it can be removed by plasma. So, the idea is to apply plasma etch directly after exposure.

Regarding the Step 4 - Photo Lithography (PL) operation simplification: Why do we develop within the costly PL equipment? Developing the exposed resist is just a wet etch/clean process that can be performed with regular cheap wet cleaning equipment.

In Step 3 - Sacrificial Light Absorbing Layer deposition - use hot air for the material solidification on the wafer during the Spinon process. This will allow the termination of the furnace and additional movements of the wafer. The high pressure above the rotating wafer will prevent the material from contamination.

Air daps also prevent the formation of voids within the metal via a metal line - we already have voids. Very strong Cu-electromigration might slightly affect the surface of the via and metal line, but the voids will not be formed within the metal.

Semiconductor devices are becoming more complex and expensive. But what exactly are we paying for when we buy a computer, cellphone, or any device containing a microchip? It’s not for radically new functions—the core components remain the same: transistors and interconnections. According to Moore’s law, transistors are getting smaller, with more interconnection layers added, making the manufacturing process longer and more costly.

In reality, we’re paying for the inability of engineers to efficiently solve engineering challenges.

This project leverages System Functional Modeling (SFM) to analyze the IC interconnection layer and Process Functional Modeling (PFM) to evaluate its manufacturing process. These analyses aim to deepen our understanding of both the device and the production process, generating innovative solutions for cost reduction and improved efficiency.

Optimizing IC Interconnection: A Functional Approach to Innovation (Stay updated on the project's progress)

Projects related to innovations and problem solving in the microchip manufacturing

Optimizing IC Interconnection: A Functional Approach to Innovation

The internal or external contour or profile of a component or system as required for ergonomic and function rather than aesthetic reasons

Shape

No diffusion of Cu or voids formation due to electromigration effect - Metal line remains unchanged

Local quality

Merging

Pneumatics or hydraulics

Parameter changes

Version: Basic version, Component: Barrier - top layer

Loss or waste of elements of a system or its surroundings – substances, materials, sub-systems, products, fields, etc.  Can be partial or complete, permanent or temporary.

Loss of substance

The barrier takes the volume of the via and trench therefore, the volume of the metal via and metal line becomes smaller, reducing the conductivity of the line and affecting the current as a product

The nozzle directs the solution to the wafer to dissolve the residue

Segmentation

Component: Nozzle

This parameter is designed as a catch-all for any form of inefficiency internal to or around a system that manifests as a harmful effect on something around the system.  Can also mean any form of pollutant or environmental emission generated by a system or object.  This is a derivative of the 'loss of substance' definition above, the focus however is on "harmful emissions" this aspect is on the production of chemicals, etc. that was not one of the original substances contained within the system.

Object generated harmful factors

The cleaning solution, together with the dissolved residue remains on the wafer and should be removed by the wafer rotation

The extent to which a user is able to learn how to operate, operate or control a system or object.  The convenience of use.

Ease of operation

The Other way around

Intermediary

Component: Pump

The measure of an object's capacity for doing work.  This parameter focuses on the actual amount of energy (rather than the efficiency of its use, see 27).  'Moving' includes any situation where there is any degree of relative motion between two or more parts related to the problem.  The relative motion may be a few microns or larger amounts.

Use of energy by moving object

Gaseous by-products are not removed and the etch rate reduces

Issues related to manufacturing, fabrication, and assembly and issues associated with an object or system.  Ease of manufacture.

Ease of manufacture

Creation of Cu(2+) ions that are needed for the electrolysis

Partial or excessive action

Composite materials

Component: Electrolyte

Any dimension relating to surfaces or surface area. These may be internal or external. They may also include contact area as well as actual surface area. 'Stationary' includes any situations where there is no form of relative motion between two or more parts related to the problem.

Area of stationary object

The electrolyte does not perfectly remove all the air from the wafer surface and structure

Optimizing IC Interconnection: A Functional Approach to Innovation (Stay updated on the project's progress)

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