To analyze why the defects remain on the wafer while cleaning with chemistry.
The process is as follows:
It seems like the process conditions are not optimal
Linear (5+ whys) analysis is needed to search for a root cause of insufficient defects removal with the chemistry and with water at rinsing
The most important point is that chemistry does not perform the process properly - improve the process is needed
Defects remain on the wafer surface after the wet cleaning process step
Try to eliminate the washing. Do we really need this?
Because the wet process does not remove the defects
To increase the density of the chemistry by temperature reduction.
Defects remain on the wafer till the very end of the process.
Ensure that the chemistry remains on the wafer as long as possible (reduce rotation of the wafer)
The chemistry is removed from the wafer before it removes the defects
Reduce evaporation rate of the chemistry, reduce rotation of the wafer
Because the chemistry contaminates the wafer due to impurities or other properties
Replace the chemistry
If | The wafer will be washed as much as needed. |
|---|---|
Then | A big amount of chemistry or water will remain on the wafer during the cleaning process. |
But | The process cost will be significantly increased. |
Defects remain on the wafer surface. The wet cleaning process suddenly becomes ineffective.
Let's apply the Effective Brainstorming (EBS) tool to generate ideas and prioritize them.
The purpose of the wet etch process is to clean the wafer, dissolve and remove all soluble material, and remove insoluble material as small particles carried by the solution flow.
Defects remain on the wafer surface after the wet cleaning process step.
Single wafer wet cleaning system.
The chemistry is poured on the rotated wafer to remove the stuff and not leave residue or particles. The wafer rotates, and the solution with the dissolved and movable particles is removed from the wafer by centrifugal forces.
Pure air operates as an important component of the system (not a supesystem component). Pure air is filtered by an air filter, but it might also move air particles within the chamber, and can stimulate the evaporation of the solution from the wafer
The sketch of the chamber is shown below:
Effective
Ineffective
Basic functions
Components
Supersystems
Frontside Chemistry | 17 17 |
Wafer | 12 |
Residue | 5 5 |
Stuff to remove | 5 |
Backside chemistry | 5 |
Chuck | 4 |
Chemistry particles | 3 |
Frontside nozzle | 3 |
Pump | 3 |
Chemistry Filter | 2 |
The most problematic components are Air and Front side Chemistry:
Do we really need an airflow? Maybe it would be better just filter without a fan. The exhaust will compensate for the pressure variations.
Front side chemistry is also the most functional component. It means the improvement can be achieved by variation of the chemistry parameters
All components of low functionality can be trimmed.
The functionality of the Exhaust can be significantly improved by relocation within the chamber
The general conclusion is to eliminate the air supply and exhaust system.
Let air enter the chamber and convert exhaust to drain with very little under-pressure.
This will stabilize the performance, reduce the evaporation rate of the chemistry, reduce the cost and simplify the system.
Defects remain on the wafer surface after the wet cleaning process step.
Single wafer wet cleaning system.
The chemistry is pored on the rotated wafer to remove the stuff and not leave residue or particles.
The sketch of the chamber is shown below:
Effective
Ineffective
Basic functions
Components
Supersystems
Chuck | 12 |
Front side chemistry | 8 20 |
Pump | 4 |
Residue | 4 4 |
Tank with chemistry | 4 |
Back side chemistry | 4 |
Air | 3 77 |
Air particles | 2 2 |
Heater | 2 |
Chemistry filter | 2 6 |
The air flow is the most harmful component - prevent air flow to avoid drying and evaporation of the chemistry that results in the leaving of the residue on the wafer surface
The system is built for wet cleaning of silicon wafers. The wafer rotates and the solution is delivered through a nozzle to the center of the wafer. The solution purpose is to dissolve the defects and remove the defects both chemically and mechanically from the wafer. The problem is that the process is not very effective and some defects remain on the wafer.
Pure air passes into the chamber and since the air can keep particles the filter is installed in the top of the chamber. Nevertheless, filter does not stop all the particles and the particles fall down to the wafer and additionally contaminate the wafer. The air, even pure air, also increases the evaporation of the solution, which reduces the time of the interaction of the solution with the defects and with the residue that remains on the wafer.
Please avoid using supesystem here - all the parts of the system should be taken and treated as components of the system.
Also we need to take into account that the chemistry wets the wafer, moves the particles and residue on the wafer
Definition of defects: defects are particles that remain on the wafer.
We suspect that the solution is flying away from the wafer too fast
The scheme of the wet cleaning system is shown in the picture below:
Effective
Ineffective
Basic functions
Components
Supersystems
Component | No impact |
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)
This project investigates radial non-uniformity of CDO low-k dielectric deposited by PECVD and its possible impact on wafer performance. Final test data indicate that faster dies are mainly located closer to the wafer center, while slower dies are more often found near the wafer periphery. The corresponding RC-delay trend also increases toward the wafer edge. The focus of the project is the capacitance component of RC-delay. CDO is expected to provide a low dielectric constant between BEOL metal lines, but the deposited film may not have uniform properties across the wafer. Near the wafer edge, the process can be influenced by different gas flow, plasma behavior, residence time, temperature, and pumping conditions. This may lead to stronger oxidation and deeper precursor decomposition near the periphery, forming CDO that is more oxygen-rich, less carbon-rich, denser, and closer in behavior to SiO₂. As a result, the dielectric constant k may increase toward the wafer edge, causing higher interline capacitance, higher RC-delay, and lower die speed. The project uses Functional Modeling to understand how PECVD chamber components and process conditions affect CDO film properties. The goal is to identify the main functional and problematic interactions and propose directions for compensation, such as radial gas-flow tuning, multi-zone showerhead design, edge compensation flow, and local plasma or temperature control.
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