To analyze why the defects remain on the wafer while cleaning with chemistry.
The process is as follows:
It seems like the process conditions are not optimal
Linear (5+ whys) analysis is needed to search for a root cause of insufficient defects removal with the chemistry and with water at rinsing
The most important point is that chemistry does not perform the process properly - improve the process is needed
Defects remain on the wafer surface after the wet cleaning process step
Try to eliminate the washing. Do we really need this?
Because the wet process does not remove the defects
To increase the density of the chemistry by temperature reduction.
Defects remain on the wafer till the very end of the process.
Ensure that the chemistry remains on the wafer as long as possible (reduce rotation of the wafer)
The chemistry is removed from the wafer before it removes the defects
Reduce evaporation rate of the chemistry, reduce rotation of the wafer
Because the chemistry contaminates the wafer due to impurities or some other properties
Replace the chemistry
If | The wafer will be washed as much as needed. |
---|---|
Then | A big amount of chemistry or water will remain on the wafer during the cleaning process. |
But | The process cost will be significantly increased. |
Defects remain on the wafer surface. The wet cleaning process suddenly becomes ineffective.
Let's apply the Effective Brainstorming (EBS) tool to generate ideas and prioritize them.
Defects remain on the wafer surface after the wet cleaning process step.
Single wafer wet cleaning system.
The chemistry is poured on the rotated wafer to remove the stuff and not leave residue or particles.
The sketch of the chamber is shown below:
Effective
Ineffective
Basic functions
Components
Supersystems
The most problematic components are Air and Front side Chemistry:
Do we really need an airflow? Maybe it would be better just filter without a fan. The exhaust will compensate for the pressure variations.
Front side chemistry is also the most functional component. It means the improvement can be achieved by variation of the chemistry parameters
All components of low functionality can be trimmed.
The functionality of the Exhaust can be significantly improved by relocation within the chamber
The general conclusion is to eliminate the air supply and exhaust system.
Let air enter the chamber and convert exhaust to drain with very little under-pressure.
This will stabilize the performance, reduce the evaporation rate of the chemistry, reduce the cost and simplify the system.
Defects remain on the wafer surface after the wet cleaning process step.
Single wafer wet cleaning system.
The chemistry is pored on the rotated wafer to remove the stuff and not leave residue or particles.
The sketch of the chamber is shown below:
Effective
Ineffective
Basic functions
Components
Supersystems
The air flow is the most harmful component - prevent air flow to avoid drying and evaporation of the chemistry that results in the leaving of the residue on the wafer surface
Option | Rank |
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hjshuyuys | 1 |
hjshuyus | 0 |
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hjshuyuyus | |
hjshuyuyus |
Semiconductor devices are becoming more complex and expensive. But what exactly are we paying for when we buy a computer, cellphone, or any device containing a microchip? It’s not for radically new functions—the core components remain the same: transistors and interconnections. According to Moore’s law, transistors are getting smaller, with more interconnection layers added, making the manufacturing process longer and more costly. In reality, we’re paying for the inability of engineers to efficiently solve engineering challenges. This project leverages System Functional Modeling (SFM) to analyze the IC interconnection layer and Process Functional Modeling (PFM) to evaluate its manufacturing process. These analyses aim to deepen our understanding of both the device and the production process, generating innovative solutions for cost reduction and improved efficiency.
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)
The project was dedicated to production yield improvement in microchip manufacturing. The bumps are created on the top of a wafer and used for the final test of all dies. Only good dies are taken for the packaging. All dies that fail the test will be scrapped. The process yield depends on the amount of "good" and "bad" dies. It was revealed that in some cases, the time between the end of the process and the final test impacts the yield. The longer the dwelling, the more dies fail the final test. If the dwelling exceeds hundreds of hours, the amount of failed dies becomes dramatically high, which results in the scrapping of the whole wafer. The problem was analyzed and solved.