Defects were found on the surface of the wafer after washing with the chemistry and rinsing with water.
Defects remain on the wafer surface after the wet cleaning process step.
Stable yield after using the chemistry from different vendors with no cost increase.
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)
Flash heating of a wafer is widely used in microchip manufacturing. The purpose of the process is to prevent the diffusion of ions and atoms. During the flash process, a wafer breakage occurs. The project's purpose is to learn and understand the mechanism of the wafer breakage and propose the solutions to prevent the wafer breakage
The number of particles is a critical parameter for microchip manufacturing. Each, even a very small particle, can potentially destroy a die. Therefore filters are widely used. Water is always filtered through fine filters to reduce the number of particles. Nevertheless, if the filter is too fine, it could cause a problem. This issue was investigated with the help of Functional Modeling. Possible solutions were generated using 40 Inventive Principles.