Wafer cleaning issues at the wet process

The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)

The project was dedicated to production yield improvement in microchip manufacturing. The bumps are created on the top of a wafer and used for the final test of all dies. Only good dies are taken for the packaging. All dies that fail the test will be scrapped. The process yield depends on the amount of "good" and "bad" dies. It was revealed that in some cases, the time between the end of the process and the final test impacts the yield. The longer the dwelling, the more dies fail the final test. If the dwelling exceeds hundreds of hours, the amount of failed dies becomes dramatically high, which results in the scrapping of the whole wafer. The problem was analyzed and solved.

Flash heating of a wafer is widely used in microchip manufacturing. The purpose of the process is to prevent the diffusion of ions and atoms. During the flash process, a wafer breakage occurs. The project's purpose is to learn and understand the mechanism of the wafer breakage and propose the solutions to prevent the wafer breakage